The influence of an interfacial hBN layer on the fluorescence of an organic molecule

• Christine Brülke,
• Oliver Bauer and
• Moritz M. Sokolowski

Beilstein J. Nanotechnol. 2020, 11, 1663–1684, doi:10.3762/bjnano.11.149

• cannot be neglected. We note that these values are slightly larger than those measured for PTCDA single crystals [55] or thick films [43]. 2.2.2 Temperature induced changes in the Raman spectra: The unique behavior of the RB mode can also be seen in its dependency on the preparation temperature both for

Revealing thermal effects in the electronic transport through irradiated atomic metal point contacts

• Bastian Kopp,
• Zhiwei Yi,
• Daniel Benner,
• Fang-Qing Xie,
• Christian Obermair,
• Thomas Schimmel,
• Johannes Boneberg,
• Paul Leiderer and
• Elke Scheer

Beilstein J. Nanotechnol. 2012, 3, 703–711, doi:10.3762/bjnano.3.80

• layer are the most prominent effects. Keywords: atom transistor; atomic contacts; cyclic voltammogram; electrochemically closed break junction; electronic transport; (Helmholtz) double layer; light-induced signals; temperature-induced changes; thermovoltage; Introduction Electronic transport on the

• about the temperature-induced changes of the Helmholtz layer. We therefore carried out voltammetric studies in order to determine the regions of the voltammogram in which the laser-induced signals are most prominent. Light-induced signals in the cyclic voltammogram of AgNO3 were observed as shown in